Colin A. Wolden
Associate Professor of Chemical Engineering

Office: 423 Alderson Hall
Phone: (303) 274-3544


Research focuses on the development of new chemical vapor deposition techniques for the molecular engineering of thin film structures with specific application to the microelectronic, optoelectronic, and renewable energy sectors. Specific research interests include: (1) pulsed plasma-assisted chemical vapor deposition of oxides and metals; (2) plasma-assisted co-evaporation (PACE) synthesis of photovoltaic absorbers; (3) PECVD of disordered metal oxides; (4) macroscopic modeling of plasma and thermal CVD reactors; (5) understanding the fundamental process-structure-property-performance relationships in these systems.

Selected Publications

  • “Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition”, M. Seman, J. J. Robbins, S. Agarwal, and C. A. Wolden, Appl. Phys. Lett.90,131504 (2007).
  • “An investigation of annealing on the dielectric performance of TiO 2 thin films”, W. Yang, J. Marino, A. Monson, andC. A. Wolden, Semicond. Sci. Technol. 21, 1573 (2006).
  • “Plasma-assisted co-evaporation of b-indium sulfide thin films”, S. Kosaraju, J. A. Marino, J. A. Harvey, and C. A. Wolden, Sol. Energy Mater. Sol. Cells 90, 1121 (2006).
  • “Formation of chalcogen containing plasmas and their use in the synthesis of photovoltaic absorbers”, S. Kosaraju, I. Repins, and C. A. Wolden, J. Vac. Sci. Technol. A 23, 1202 (2005).
  • “Real time measurement of hydrogen generated free carriers in polycrystalline ZnO thin films at room temperature”, C. A. Wolden, J. B. Baxter, T. M. Barnes, and E. S. Aydil, J. Appl. Phys.97, 043522 (2005).